Investigating interface states and oxide traps in the MoS2/oxide/Si system
Coleman, Emma M.; Mirabelli, Gioele; Bolshakov, P.; Zhao, P.; Caruso, Enrico; Gity, Farzan; Monaghan, Scott; Cherkaoui, Karim; Balestra, V.; Wallace, R. M.; Young, C. D.; Duffy, Ray; Hurley, Paul K.
Date:
2021-06-09
Copyright:
© 2021, the Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Citation:
Coleman, E., Mirabelli, G., Bolshakov, P., Zhao, P., Caruso, E., Gity, F., Monaghan, S., Cherkaoui, K., Balestra, V., Wallace, R. M., Young, C. D., Duffy, R. and Hurley, P. K.(2021) 'Investigating interface states and oxide traps in the MoS2/oxide/Si system', Solid-State Electronics, 186, 108123 (4pp). doi: 10.1016/j.sse.2021.108123
Abstract:
This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.
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Except where otherwise noted, this item's license is described as © 2021, the Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).