TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
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Date
2009-02-10
Authors
Monaghan, Scott
Cherkaoui, Karim
O'Connor, Éamon
Djara, Vladimir
Hurley, Paul K.
Oberbeck, L.
Tois, E.
Wilde, L.
Teichert, S.
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-insulator-metal capacitor structures, where the ZrO 2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics are reported for premetallization rapid thermal annealing (RTP) in N 2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO 2 is 31 plusmn 2 after RTP treatment at 400degC.
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Keywords
ALD , Capacitor , Dynamic random access memory (DRAM) , Effective dielectric constant , Gate oxide , High-k , Metal–insulator–metal (MIM) , ZrD-04 , ZrO2
Citation
Monaghan, S., Cherkaoui, K., O'Connor, É., Djara, V., Hurley, P. K., Oberbeck, L., Tois, E., Wilde, L. and Teichert, S, (2009) 'TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications', IEEE Electron Device Letters, 30(3), pp. 219-221. doi: 10.1109/LED.2008.2012356
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