Investigation of high-κ/InxGa1-xAs interfaces
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Date
2010-01
Authors
Cherkaoui, Karim
O'Connor, Éamon
Monaghan, Scott
Long, Rathnait D.
Djara, Vladimir
O'Mahony, A.
Nagle, R.
Pemble, Martyn E.
Hurley, Paul K.
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Publisher
IOP Publishing Ltd
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Abstract
The quality of the high-k/InxGa1-xAs interface is a crucial factor in achieving high electron mobility compound semiconductor field effect transistors. Capacitance and conductance characterisation methods were employed to evaluate different high-k/InGaAs interfaces. This paper will first discuss the specificity of capacitance voltage characteristics of compound semiconductor MOS structures, and then the recent progress in the study of high k/InxGa1 xAs interfaces will be presented. The capacitance and conductance measurements are combined to provide a picture of the interface state density. We have also investigated the merit of using intermediate k value dielectrics such as Al2O3 and MgO as interface control layers between the semiconductor and the main high k layer.
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Keywords
High-k/InxGa1-xAs interface
Citation
Cherkaoui, K., O’Connor, É., Monaghan, S., Long, R. D., Djara, V., O'Mahony, A., Nagle, R., Pemble, M. E. and Hurley, P. K. (2010) 'Investigation of high-κ/InxGa1-xAs interfaces', ECS Transactions, 28(2), pp. 181-190. doi: 10.1149/1.3372574
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© 2010, The Electrochemical Society.