Impact of forming gas annealing on the performance of surface-channel In0.53Ga0.47As MOSFETs with an ALD Al2O3 gate dielectric
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Date
2012-02-17
Authors
Djara, Vladimir
Cherkaoui, Karim
Schmidt, Michael
Monaghan, Scott
O'Connor, Éamon
Povey, Ian
O'Connell, Dan
Pemble, Martyn E.
Hurley, Paul K.
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
We investigated the effect of forming gas (5% H 2 /95% N 2 ) annealing on surface-channel In 0.53 Ga 0.47 As MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. We found that a forming gas anneal (FGA) at 300°C for 30 min was efficient at removing or passivating positive fixed charges in Al 2 O 3 , resulting in a shift of the threshold voltage from -0.63 to 0.43 V and in an increase in the I on / I off ratio of three orders of magnitude. Following FGA, the MOSFETs exhibited a subthreshold swing of 150 mV/dec, and the peak transconductance, drive current, and peak effective mobility increased by 29%, 25%, and 15%, respectively. FGA significantly improved the source- or drain-to-substrate junction isolation, with a reduction of two orders of magnitude in the reverse bias leakage exhibited by the Si-implanted In 0.53 Ga 0.47 As n + /p junctions, which is consistent with passivation of midgap defects in In 0.53 Ga 0.47 As by the FGA process.
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Keywords
Forming gas anneal (FGA) , High-k , InGaAs , Metal–oxide–semiconductor field-effect transistor (MOSFET) , Surface channel
Citation
Djara, V., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I. M., O'Connell, D., Pemble, M. E. and Hurley, P. K. (2012) 'Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric', IEEE Transactions on Electron Devices, 59(4), pp. 1084-1090. doi: 10.1109/TED.2012.2185242
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