Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs
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Accepted Version
Date
2012-05-07
Authors
Djara, Vladimir
Cherkaoui, Karim
Schmidt, Michael
Gomeniuk, Y. Y.
O'Connor, Éamon
Povey, Ian M.
O'Connell, Dan
Monaghan, Scott
Pemble, Martyn E.
Hurley, Paul K.
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Journal ISSN
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
Interface and oxide defects in surface-channel In 0.53 Ga 0.47 As n-MOSFETs, featuring a threshold voltage, V T , of 0.43 V, a subthreshold swing, SS, of 150 mV/dec, an I ON /I OFF of ~ 10 4 and a source/drain resistance, R SD , of 103 Ω, have been investigated using “split C-V” measurements and self-consistent Poisson-Schrödinger quasi-static C-V simulations. An integrated density of traps across the In 0.53 Ga 0.47 As band gap at the Al 2 O 3 /In 0.53 Ga 0.47 As interface, N Trap , of ~ 7.8 × 10 12 /cm 2 , has been obtained from a comparison of the theoretical and experimental quasi-static C-V responses, where N Trap reflects the combined contribution of interface traps and border traps. An equivalent surface density of fixed positive oxide charges, N + , of 1.4 × 10 12 /cm 2 is also reported. Finally, the application of the Maserjian Y-function to the Al 2 O 3 /In 0.53 Ga 0.47 As MOS system is briefly discussed.
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Keywords
InGaAs , MOSFET , High-k , Split C-V , Interface traps , Oxide charges , Border traps
Citation
Djara, V., Cherkaoui, K., Schmidt, M., Gomeniuk, Y. Y., O'Connor, É., Povey, I. M., O'Connell, D., Monaghan, S., Pemble, M. E. and Hurley, P. K. (2012) 'Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs', 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Grenoble, France, 6-7 March, pp. 29-32. doi: 10.1109/ULIS.2012.6193349
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