Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs

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dc.contributor.authorDjara, Vladimir
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorSchmidt, Michael
dc.contributor.authorGomeniuk, Y. Y.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorPovey, Ian M.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-26T11:46:19Z
dc.date.available2022-07-26T11:46:19Z
dc.date.issued2012-05-07
dc.date.updated2022-07-22T11:25:40Z
dc.description.abstractInterface and oxide defects in surface-channel In 0.53 Ga 0.47 As n-MOSFETs, featuring a threshold voltage, V T , of 0.43 V, a subthreshold swing, SS, of 150 mV/dec, an I ON /I OFF of ~ 10 4 and a source/drain resistance, R SD , of 103 Ω, have been investigated using “split C-V” measurements and self-consistent Poisson-Schrödinger quasi-static C-V simulations. An integrated density of traps across the In 0.53 Ga 0.47 As band gap at the Al 2 O 3 /In 0.53 Ga 0.47 As interface, N Trap , of ~ 7.8 × 10 12 /cm 2 , has been obtained from a comparison of the theoretical and experimental quasi-static C-V responses, where N Trap reflects the combined contribution of interface traps and border traps. An equivalent surface density of fixed positive oxide charges, N + , of 1.4 × 10 12 /cm 2 is also reported. Finally, the application of the Maserjian Y-function to the Al 2 O 3 /In 0.53 Ga 0.47 As MOS system is briefly discussed.en
dc.description.sponsorshipScience Foundation Ireland (07/SRC/I 1172F)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDjara, V., Cherkaoui, K., Schmidt, M., Gomeniuk, Y. Y., O'Connor, É., Povey, I. M., O'Connell, D., Monaghan, S., Pemble, M. E. and Hurley, P. K. (2012) 'Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs', 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Grenoble, France, 6-7 March, pp. 29-32. doi: 10.1109/ULIS.2012.6193349en
dc.identifier.doi10.1109/ULIS.2012.6193349en
dc.identifier.endpage32en
dc.identifier.isbn978-1-4673-0192-3
dc.identifier.isbn978-1-4673-0191-6
dc.identifier.issn978-1-4673-0190-9
dc.identifier.startpage29en
dc.identifier.urihttps://hdl.handle.net/10468/13404
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof13th International Conference on Ultimate Integration on Silicon (ULIS), Grenoble, France, 6-7 March 2012
dc.rights© 2012, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectInGaAsen
dc.subjectMOSFETen
dc.subjectHigh-ken
dc.subjectSplit C-Ven
dc.subjectInterface trapsen
dc.subjectOxide chargesen
dc.subjectBorder trapsen
dc.titleStudy of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETsen
dc.typeConference itemen
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