(Invited) The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applications
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Date
2017-01
Authors
Hurley, Paul K.
Monaghan, Scott
O'Connor, Eamon
Caruso, Enrico
Cherkaoui, Karim
Floyd, Liam
Povey, Ian M.
Alan, David
Millar, John
Peralagu, Uthayasankaran
Journal Title
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Volume Title
Publisher
IOP Publishing
Published Version
Abstract
Impedance spectroscopy of the metal-oxide semiconductor (MOS) system has played a central role in the development of silicon-based complementary MOS (CMOS) technology over the past 50 years [1, 2]. With current research interest into alternative semiconductor channels to silicon for MOSFET and tunnel FET technologies, the measurement and interpretation of the overall impedance of the MOS structure requires detailed analysis to separate and quantify the contribution of interface states, and near interface traps (border traps), on the capacitance and conductance response, and to separate the contribution of these electrically active defect states from the ac response of minority carriers in the case of genuine inversion of the semiconductor/dielectric interface.
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Keywords
Spectroscopy , Metal-oxide semiconductor (MOS) system , MOS system , Photonic applications
Citation
Hurley, P.K., Monaghan, S., O’Connor, E., Caruso, E., Cherkaoui, K., Floyd, L., Povey, I.M., Millar, D.A.J., Peralagu, U. and Thayne, I.G. (2017) ‘(Invited)The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applications’, ECS Meeting Abstracts, MA2017-02(14), pp. 850–850. doi: 10.1149/MA2017-02/14/850.
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© 2017