(Invited) The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applications

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dc.contributor.authorHurley, Paul K.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorO'Connor, Eamon
dc.contributor.authorCaruso, Enrico
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorFloyd, Liam
dc.contributor.authorPovey, Ian M.
dc.contributor.authorAlan, David
dc.contributor.authorMillar, John
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorThayne, Iain G.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2023-01-25T15:13:29Z
dc.date.available2023-01-25T15:13:29Z
dc.date.issued2017-01
dc.date.updated2023-01-24T19:34:41Z
dc.description.abstractImpedance spectroscopy of the metal-oxide semiconductor (MOS) system has played a central role in the development of silicon-based complementary MOS (CMOS) technology over the past 50 years [1, 2]. With current research interest into alternative semiconductor channels to silicon for MOSFET and tunnel FET technologies, the measurement and interpretation of the overall impedance of the MOS structure requires detailed analysis to separate and quantify the contribution of interface states, and near interface traps (border traps), on the capacitance and conductance response, and to separate the contribution of these electrically active defect states from the ac response of minority carriers in the case of genuine inversion of the semiconductor/dielectric interface.en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHurley, P.K., Monaghan, S., O’Connor, E., Caruso, E., Cherkaoui, K., Floyd, L., Povey, I.M., Millar, D.A.J., Peralagu, U. and Thayne, I.G. (2017) ‘(Invited)The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applications’, ECS Meeting Abstracts, MA2017-02(14), pp. 850–850. doi: 10.1149/MA2017-02/14/850.en
dc.identifier.doi10.1149/MA2017-02/14/850en
dc.identifier.endpage850en
dc.identifier.journaltitleECS Meeting Abstractsen
dc.identifier.startpage850en
dc.identifier.urihttps://hdl.handle.net/10468/14130
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.relation.urihttps://doi.org/10.1149/MA2017-02/14/850
dc.rights© 2017en
dc.subjectSpectroscopyen
dc.subjectMetal-oxide semiconductor (MOS) systemen
dc.subjectMOS systemen
dc.subjectPhotonic applicationsen
dc.title(Invited) The inversion behaviour of narrow band gap MOS systems: experimental observations, physics based simulations and applicationsen
dc.typeConference itemen
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