A first-principle assessment at atomistic scale of interface phenomena in down-scaling hafnium-based metal-insulator-metal diodes
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Date
2023-02-14
Authors
Laudadio, Emiliano
Aldrigo, Martino
Stipa, Pierluigi
Pierantoni, Luca
Mencarelli, Davide
Dragoman, Mircea
Modreanu, Mircea
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Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
In this paper, we present first-principle calculations to study the electrical properties of hafnium oxide (HfO2)-based metal-insulator-metal (MIM) diodes. These devices have been simulated by interposing 3 nm of HfO2 between drain and source contacts made of gold and platinum, respectively. The monoclinic and orthorhombic polymorphs of HfO2 have been considered to model different MIM diodes, and the interface geometries have been optimized to compute the I-V characteristics. The simulation results demonstrate the influence of the HfO2 polymorphs on the MIM properties and the importance to understand the interface phenomena that are related to the measurable properties of the proposed devices.
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Keywords
DFT , Diodes , Ferroelectric materials , Hafnium compounds , I-V characteristics , Interface , Optimization
Citation
Laudadio, E., Aldrigo, M., Stipa, P., Pierantoni, L., Mencarelli, D., Dragoman, M. and Modreanu, M. (2022) 'A first-principle assessment at atomistic scale of interface phenomena in down-scaling hafnium-based metal-insulator-metal diodes', 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Limoges, France, 6-8 July. doi: 10.1109/NEMO51452.2022.10038975
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