Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD
Smith, Matthew D.; Taylor, Elaine; Sadler, Thomas C.; Zubialevich, Vitaly Z.; Lorenz, Katharina; Li, Haoning; O'Connell, John; Alves, Eduardo Jorge; Holmes, Justin D.; Martin, Robert W.; Parbrook, Peter J.
Date:
2014-04-16
Copyright:
© The Royal Society of Chemistry 2014.
Citation:
SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.http://dx.doi.org/10.1039/C4TC00480A
Abstract:
We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.
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