Electron beam lithography assisted high-resolution pattern generation

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dc.contributor.advisor Holmes, Justin D. en
dc.contributor.author Gangnaik, Anushka S.
dc.date.accessioned 2016-04-08T08:59:53Z
dc.date.issued 2015
dc.date.submitted 2015
dc.identifier.citation Gangnaik, A. 2015. Electron beam lithography assisted high-resolution pattern generation. PhD Thesis, University College Cork. en
dc.identifier.endpage 183 en
dc.identifier.uri http://hdl.handle.net/10468/2441
dc.description.abstract This thesis details the top-down fabrication of nanostructures on Si and Ge substrates by electron beam lithography (EBL). Various polymeric resist materials were used to create nanopatterns by EBL and Chapter 1 discusses the development characteristics of these resists. Chapter 3 describes the processing parameters, resolution and topographical and structural changes of a new EBL resist known as ‘SML’. A comparison between SML and the standard resists PMMA and ZEP520A was undertaken to determine the suitability of SML as an EBL resist. It was established that SML is capable of high-resolution patterning and showed good pattern transfer capabilities. Germanium is a desirable material for use in microelectronic applications due to a number of superior qualities over silicon. EBL patterning of Ge with high-resolution hydrogen silsesquioxane (HSQ) resist is however difficult due to the presence of native surface oxides. Thus, to combat this problem a new technique for passivating Ge surfaces prior to EBL processes is detailed in Chapter 4. The surface passivation was carried out using simple acids like citric acid and acetic acid. The acids were gentle on the surface and enabled the formation of high-resolution arrays of Ge nanowires using HSQ resist. Chapter 5 details the directed self-assembly (DSA) of block copolymers (BCPs) on EBL patterned Si and, for the very first time, Ge surfaces. DSA of BCPs on template substrates is a promising technology for high volume and cost effective nanofabrication. The BCP employed for this study was poly (styrene-b-ethylene oxide) and the substrates were pre-defined by HSQ templates produced by EBL. The DSA technique resulted into pattern rectification (ordering in BCP) and in pattern multiplication within smaller areas. en
dc.description.sponsorship Science Foundation Ireland ("Novel Nanowire Structures for Devices” project - Grant agreement no. 09-IN1-I2602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2015, Anushka Gangnaik. en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Electron beam lithography en
dc.subject Nanochemistry en
dc.subject Nanofabrication en
dc.subject Block coploymers en
dc.subject Nanowires en
dc.subject EBL resists en
dc.title Electron beam lithography assisted high-resolution pattern generation en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral en
dc.type.qualificationname PhD (Science) en
dc.internal.availability Full text available en
dc.description.version Accepted Version
dc.contributor.funder Science Foundation Ireland en
dc.description.status Not peer reviewed en
dc.internal.school Chemistry en
dc.internal.school Tyndall National Institute en
dc.check.reason This thesis is due for publication or the author is actively seeking to publish this material en
dc.check.opt-out Not applicable en
dc.thesis.opt-out false
dc.check.chapterOfThesis 1,4,5
dc.check.embargoformat E-thesis on CORA only en
ucc.workflow.supervisor j.holmes@ucc.ie
dc.internal.conferring Spring 2016 en


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© 2015, Anushka Gangnaik. Except where otherwise noted, this item's license is described as © 2015, Anushka Gangnaik.
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