AuxAg1-x alloy seeds: A way to control growth, morphology and defect formation in Ge nanowires

Show simple item record Biswas, Subhajit Holmes, Justin D. 2016-05-23T11:12:41Z 2016-05-23T11:12:41Z 2012-06
dc.identifier.citation Biswas, S. and Holmes, J. D. (2012) 'AuxAg1-x alloy seeds: A way to control growth, morphology and defect formation in Ge nanowires' . Nanotech 2012. 18-21 June. Santa Clara, CA. In: Nanotech 2012, Vol. 1. pp. 749-752. ISBN: 978-1-4665-6274-5 en
dc.identifier.volume 1 en
dc.identifier.startpage 749 en
dc.identifier.endpage 752 en
dc.identifier.isbn 978-1-4665-6274-5
dc.description.abstract Germanium (Ge) nanowires are of current research interest for high speed nanoelectronic devices due to the lower band gap and high carrier mobility compatible with high K-dielectrics and larger excitonic Bohr radius ensuing a more pronounced quantum confinement effect [1-6]. A general way for the growth of Ge nanowires is to use liquid or a solid growth promoters in a bottom-up approach which allow control of the aspect ratio, diameter, and structure of 1D crystals via external parameters, such as precursor feedstock, temperature, operating pressure, precursor flow rate etc [3, 7-11]. The Solid-phase seeding is preferred for more control processing of the nanomaterials and potential suppression of the unintentional incorporation of high dopant concentrations in semiconductor nanowires and unrequired compositional tailing of the seed-nanowire interface [2, 5, 9, 12]. There are therefore distinct features of the solid phase seeding mechanism that potentially offer opportunities for the controlled processing of nanomaterials with new physical properties. A superior control over the growth kinetics of nanowires could be achieved by controlling the inherent growth constraints instead of external parameters which always account for instrumental inaccuracy. The high dopant concentrations in semiconductor nanowires can result from unintentional incorporation of atoms from the metal seed material, as described for the Al catalyzed VLS growth of Si nanowires [13] which can in turn be depressed by solid-phase seeding. In addition, the creation of very sharp interfaces between group IV semiconductor segments has been achieved by solid seeds [14], whereas the traditionally used liquid Au particles often leads to compositional tailing of the interface [15] . Korgel et al. also described the superior size retention of metal seeds in a SFSS nanowire growth process, when compared to a SFLS process using Au colloids [12]. Here in this work we have used silver and alloy seed particle with different compositions to manipulate the growth of nanowires in sub-eutectic regime. The solid seeding approach also gives an opportunity to influence the crystallinity of the nanowires independent of the substrate. Taking advantage of the readily formation of stacking faults in metal nanoparticles, lamellar twins in nanowires could be formed. en
dc.description.uri en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.relation.ispartof NSTI-Nanotech
dc.rights © 2012 Nano Science and Technology Institute. en
dc.subject Alloy nanoparticles en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Transmission electron microscopy en
dc.subject Twin boundary en
dc.title AuxAg1-x alloy seeds: A way to control growth, morphology and defect formation in Ge nanowires en
dc.type Conference item en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2013-03-07T21:47:59Z
dc.description.version Published Version en
dc.internal.rssid 182546662
dc.description.status Peer reviewed en
dc.identifier.journaltitle NSTI-Nanotech en
dc.internal.copyrightchecked No !!CORA!! Email en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Santa Clare, CA. en
dc.internal.IRISemailaddress en

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