Nanowires for 3d silicon interconnection – low temperature compliant nanowire-polymer film for z-axis interconnect
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Full Text E-thesis
Date
2016
Authors
Tao, Jing
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Publisher
University College Cork
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Abstract
Semiconductor chip packaging has evolved from single chip packaging to 3D heterogeneous system integration using multichip stacking in a single module. One of the key challenges in 3D integration is the high density interconnects that need to be formed between the chips with through-silicon-vias (TSVs) and inter-chip interconnects. Anisotropic Conductive Film (ACF) technology is one of the low-temperature, fine-pitch interconnect method, which has been considered as a potential replacement for solder interconnects in line with continuous scaling of the interconnects in the IC industry. However, the conventional ACF materials are facing challenges to accommodate the reduced pad and pitch size due to the micro-size particles and the particle agglomeration issue. A new interconnect material - Nanowire Anisotropic Conductive Film (NW-ACF), composed of high density copper nanowires of ~ 200 nm diameter and 10-30 µm length that are vertically distributed in a polymeric template, is developed in this work to tackle the constrains of the conventional ACFs and serves as an inter-chip interconnect solution for potential three-dimensional (3D) applications.
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Keywords
Reliability , 3D integration , Nanowire anisotropic conductive film (NW-ACF) , Electrochemical deposition , Thermocompression bonding , Fine-pitch interconnection , Daisy-chain resistance , Bonding interface analysis , Shear strength , RF transmission , Thermal impedance
Citation
Tao, J. 2016. Nanowires for 3d silicon interconnection – low temperature compliant nanowire-polymer film for z-axis interconnect. PhD Thesis, University College Cork.