High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

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dc.contributor.author Quan, Zhiheng
dc.contributor.author Dinh, Duc V.
dc.contributor.author Presa, Silvino
dc.contributor.author Roycroft, Brendan
dc.contributor.author Foley, Ann
dc.contributor.author Akhter, Mahbub
dc.contributor.author O'Mahony, Donagh
dc.contributor.author Maaskant, Pleun P.
dc.contributor.author Caliebe, Marian
dc.contributor.author Scholz, Ferdinand
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2016-11-09T12:28:11Z
dc.date.available 2016-11-09T12:28:11Z
dc.date.issued 2016-08-26
dc.identifier.citation Quan, Z., Dinh, D.V., Presa, S., Roycroft, B., Foley, A., Akhter, M., O'Mahony, D., Maaskant, P.P., Caliebe, M., Scholz, F. and Parbrook, P.J. (2016) ‘High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes’, IEEE Photonics Journal, 8(5), 1601808 (8pp). doi:10.1109/JPHOT.2016.2596245 en
dc.identifier.volume 8 en
dc.identifier.issued 5 en
dc.identifier.startpage 1 en
dc.identifier.endpage 8 en
dc.identifier.issn 1943-0655
dc.identifier.uri http://hdl.handle.net/10468/3258
dc.identifier.doi 10.1109/JPHOT.2016.2596245
dc.description.abstract Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers en
dc.rights © 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. en
dc.subject Light-emitting diodes en
dc.subject LEDs en
dc.subject Optoelectronic materials en
dc.subject Semipolar gallium nitride en
dc.subject GaN en
dc.subject Laser lift-off en
dc.subject LLO en
dc.subject Metal organic vapor phase epitaxy en
dc.subject MOVPE en
dc.title High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter Parbrook, Tyndall Photonics, Tyndall National Institute, University College Cork, Ireland. +353-21-234 6365. Email: p.parbrook@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Photonics Journal en
dc.internal.IRISemailaddress p.parbrook@ucc.ie
dc.identifier.articleid 1601808


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