Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers
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Date
2016-07
Authors
Broderick, Christopher A.
Bogusevschi, Silviu
O'Reilly, Eoin P.
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Publisher
IEEE
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Abstract
The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.
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Keywords
Aluminium compounds , Current density , Gallium arsenide , Indium compounds , Optical design techniques , Optical fabrication , Optical materials , Quantum well lasers , (Al)InGaAs , GaAs , GaAs-based (Al)InGaAs metamorphic quantum well lasers , GaAs-based long-wavelength semiconductor lasers , High differential gain , Lattice-mismatched heterostructure growth , Low threshold current densities , Optical confinement , Wavelength 1.3 mum , Wavelength 1.55 mum , Indium gallium arsenide , Laser theory , Metals , Performance evaluation , Semiconductor lasers , Substrates
Citation
C. A. Broderick, S. Bogusevschi and E. P. O'Reilly, "Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers," 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, 2016, pp. 19-20.
doi: 10.1109/NUSOD.2016.7546993
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