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The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors
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Date
2017-04-06
Authors
Fu, Yen-Chun
Peralagu, Uthayasankaran
Millar, David A. J.
Lin, Jun
Povey, Ian M.
Li, Xu
Monaghan, Scott
Droopad, Ravi
Hurley, Paul K.
Thayne, Iain G.
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Publisher
AIP Publishing
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Abstract
This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate dielectrics deposited on (110) oriented n- and p-doped In0.53Ga0.47 As layers metal-oxide-semiconductor capacitors (MOSCAPs). In combination, these approaches enable significant Fermi level movement through the bandgap of both n- and p-doped In0.53Ga0.47 As (110) MOSCAPs. A midgap interface trap density (Dit) value in the range 0.87−1.8×1012 cm−2eV−10.87−1.8×1012 cm−2eV−1 is observed from the samples studied. Close to the conduction band edge, a Dit value of 3.1×1011 cm−2eV−13.1×1011 cm−2eV−1 is obtained. These data indicate the combination of sulfur pre-treatment and FGA is advantageous in passivating trap states in the upper half of the bandgap of (110) oriented In0.53Ga0.47 As. This is further demonstrated by a reduction in border trap density in the n-type In0.53Ga0.47 As (110) MOSCAPs from 1.8×1012 cm−21.8×1012 cm−2 to 5.3×1011 cm−25.3×1011 cm−2 as a result of the FGA process. This is in contrast to the observed increase in border trap density after FGA from 7.3×1011 cm−27.3×1011 cm−2 to 1.4×1012 cm−21.4×1012 cm−2 in p-type In0.53Ga0.47 As (110) MOSCAPs, which suggest FGA is not as effective in passsivating states close to the valence band edge.
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Keywords
III-V semiconductors , Electrical hysteresis , Capacitance , Band gap , Atomic layer deposition
Citation
Fu, Y.-C., Peralagu, U., Millar, D. A. J., Lin, J., Povey, I., Li, X., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) 'The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors', Applied Physics Letters, 110(14), pp. 142905. doi:10.1063/1.4980012
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© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in: Appl. Phys. Lett. 110, 142905 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4980012