Tyndall National Institute

Tyndall National Institute

 

Tyndall National Institute is one of Europe's leading research centres, specialising in Information and Communications Technology (ICT) hardware. Tyndall has a critical mass of over 360 researchers, engineers, students and support staff placing a particular emphasis on quality, accomplishment and the delivery to Ireland of value from research. Tyndall’s areas of expertise range from micro-nanolectronics, microsystems, and photonics to theory modeling supported by a central fabrication facility.

For further information visit the Tyndall website

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  • Yu, Yukui; Wang, Wei; Ouyang, Xing; Wang, Zhenpeng; Zhao, Jian (Institute of Electrical and Electronics Engineers (IEEE), 2018-01-23)
    This paper introduces a new multicarrier system, named sparse orthogonal circulant transform multiplexing (S-OCTM), for optical fiber communication. This technique uses an inverse sparse orthogonal circulant transform ...
  • Alexander, Justin K. (University College Cork, 2017)
    As the number of internet users continues to grow, along with the increase in bandwidth demanding services, the optical communications network struggles to keep up. Upgrading the optical fibre network is a costly endeavour, ...
  • Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (Wiley, 2018-01-09)
    The conditions required for a high growth rate of AlN in a 3 × 2″ showerhead-type vertical flow metalorganic vapor phase epitaxy (MOVPE) reactor are studied. It is found that at the standard growth conditions (low V/III, ...
  • Georgiev, Yordan M.; Panova, Nedyalka; Gangnaik, Anushka S.; Ghoshal, Tandra; Nikolova, Antoaneta; Holmes, Justin D. (изток-запад [East-West], 2017-11)
    The present work combines science and arts in an innovative and intriguing way. Using Electron Beam Lithography (EBL) and Directed Self-Assembly (DSA) of Block Co-Polymers (BCP) in conjunction with the shortest poetic form, ...
  • Razavi, Pedram; Greer, James C. (Elsevier, 2017-12-06)
    Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures ...

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