Tyndall National Institute

Tyndall National Institute

 

Tyndall National Institute is one of Europe's leading research centres, specialising in Information and Communications Technology (ICT) hardware. Tyndall has a critical mass of over 360 researchers, engineers, students and support staff placing a particular emphasis on quality, accomplishment and the delivery to Ireland of value from research. Tyndall’s areas of expertise range from micro-nanolectronics, microsystems, and photonics to theory modeling supported by a central fabrication facility.

For further information visit the Tyndall website

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  • Campanella, Humberto; Qian, You; Romero, Christian O.; Giner, Joan; Kumar, Rakesh (Institute of Electrical and Electronics Engineers (IEEE), 2020-01)
    This work is the first demonstration of a monolithic multiband RF front-end module (RF-FEM), integrating MEMS Lamb-wave filters and switches on 200mm RF silicon-on-insulator (RFSOI) foundry technology. Multiple MEMS filters ...
  • Ouyang, Xing; Talli, Giuseppe; Power, Mark; Yang, Mingwei; Djordjevic, Ivan; Townsend, Paul (OSA Publishing, 2019-11)
    We propose a bit-interleaved coded OCDM with nonlinear IB-DFE for IM/DD systems, and for the first time experimentally demonstrate a 31-Gbit/s KP4-coded OCDM signal over 50-km S-SMF achieving additional 5-dB coding gain ...
  • Takeuchi, Yuki; Violas, Antoine; Fujita, Tetsuya; Kumamoto, Yasuaki; Modreanu, Mircea; Tanaka, Takuo; Fujita, Katsumasa; Takeyasu, Nobuyuki (ACS Publications, 2020-05-30)
    We evaluated the hot carrier generation in two-dimensional (2D) silver nanoparticle (AgNP) arrays under light illumination at different wavelengths, 458, 532, 671, and 785 nm. The 2D AgNP arrays were tailored to match the ...
  • Gomeniuk, Y. V.; Gomeniuk, Y. Y.; Rudenko, T. E.; Okholin, P. N.; Glotov, V. I.; Nazarova, T. M.; Djara, Vladimir; Cherkaoui, Karim; Hurley, Paul K.; Nazarov, A. N. (IOP Publishing, 2019-03-02)
    In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. ...
  • Galluccio, Emmanuele; Petkov, Nikolay; Mirabelli, Gioele; Doherty, Jessica; Lin, Shih-Va; Lu, Fang-Liang; Liu, Chee Wee; Holmes, Justin D.; Duffy, Ray (Institute of Electrical and Electronics Engineers (IEEE), 2019-04)
    The aim of this work is to provide a systematic and comparative study on the material characteristics and electrical contact performance for a germanium-tin (GeSn) alloy with a high percentage of Sn (8%). Thin metal films ...

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