Properties of rf-sputtered indium-tin-oxynitride thin films

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Properties of rf-sputtered indium-tin-oxynitride thin films

Aperathitis, E.; Bender, M.; Cimalla, V.; Ecke, G.; Modreanu, Mircea
Date: 2003-07
Copyright: © 2003 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Aperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1582368
Related: http://aip.scitation.org/doi/abs/10.1063/1.1582368
Citation: Aperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266. doi: 10.1063/1.1582368
Published Version: 10.1063/1.1582368

Abstract:

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N-2, respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N-2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium-tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed.

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