Si(100)-SiO2 interface properties following rapid thermal processing

Show simple item record O'Sullivan, B. J. Hurley, Paul K. Leveugle, C. Das, J. H. 2017-07-12T09:11:18Z 2017-07-12T09:11:18Z 2001-04
dc.identifier.citation O’Sullivan, B. J., Hurley, P. K., Leveugle, C. and Das, J. H. (2001) 'Si(100)–SiO2 interface properties following rapid thermal processing', Journal of Applied Physics, 89(7), pp. 3811-3820. doi: 10.1063/1.1343897 en
dc.identifier.volume 89
dc.identifier.issued 7
dc.identifier.startpage 3811
dc.identifier.endpage 3820
dc.identifier.issn 0021-8979
dc.identifier.doi 10.1063/1.1343897
dc.description.abstract An experimental examination of the properties of the Si(100)-SiO2 interface measured following rapid thermal processing (RTP) is presented. The interface properties have been examined using high frequency and quasi-static capacitance-voltage (CV) analysis of metal-oxide-silicon (MOS) capacitor structures immediately following either rapid thermal oxidation (RTO) or rapid thermal annealing (RTA). The experimental results reveal a characteristic peak in the CV response measured following dry RTO and RTA (T > 800 degreesC), as the Fermi level at the Si(100)-SiO2 interface approaches the conduction band edge. Analysis of the QSCV responses reveals a high interface state density across the energy gap following dry RTO and RTA processing, with a characteristic peak density in the range 5.5x10(12) to 1.7x10(13) cm(-2) eV(-1) located at approximately 0.85-0.88 eV above the valence band edge. When the background density of states for a hydrogen-passivated interface is subtracted, another peak of lower density (3x10(12) to 7x10(12) cm(-2) eV(-1)) is observed at approximately 0.25-0.33 eV above the valence band edge. The experimental results point to a common interface state defect present after processes involving rapid cooling (10(1)-10(2) degreesC/s) from a temperature of 800 degreesC or above, in a hydrogen free ambient. This work demonstrates that the interface states measured following RTP (T > 800 degreesC) are the net contribution of the P-b0/P-b1 silicon dangling bond defects for the oxidized Si(100) orientation. An important conclusion arising from this work is that the primary effect of an RTA in nitrogen (600-1050 degreesC) is to cause hydrogen desorption from pre-existing P-b0/P-b1 silicon dangling bond defects. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are briefly discussed. The significance of these new results to thin oxide growth and optimization by RTO are also considered. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2001 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Sullivan, B. J., Hurley, P. K., Leveugle, C. and Das, J. H. (2001) 'Si(100)–SiO2 interface properties following rapid thermal processing', Journal of Applied Physics, 89(7), pp. 3811-3820 and may be found at en
dc.subject Electron-spin-resonance en
dc.subject P-b centers en
dc.subject Si/sio2 interface en
dc.subject Boron-diffusion en
dc.subject Gate oxides en
dc.subject Band-gap en
dc.subject Silicon en
dc.subject (111)si/sio2 en
dc.subject Defects en
dc.subject (100)si/sio2 en
dc.title Si(100)-SiO2 interface properties following rapid thermal processing en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Benjamin O'Sullivan, Tyndall National Institute, University College Cork, Cork, Ireland, +353 21 490 3000, E-mail: en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress en

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