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Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Gajula, D. R.; Baine, P.; Modreanu, Mircea; Hurley, Paul K.; Armstrong, B. M.; McNeill, D. W.
Date:
2014
Copyright:
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4858961
Citation:
Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102. doi: 10.1063/1.4858961
Abstract:
Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (similar to 2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm. (C) 2014 AIP Publishing LLC.
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