Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
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Published Version
Date
2014
Authors
Gajula, D. R.
Baine, P.
Modreanu, Mircea
Hurley, Paul K.
Armstrong, B. M.
McNeill, D. W.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (similar to 2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm. (C) 2014 AIP Publishing LLC.
Description
Keywords
Schottky barriers , Oxidation , Ge(100) , Mosfets , Germanium , Elemental semiconductors , Aluminium , Fermi levels , Metal to metal contacts , Surfaces
Citation
Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102. doi: 10.1063/1.4858961
Copyright
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4858961