Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

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dc.contributor.author Gajula, D. R.
dc.contributor.author Baine, P.
dc.contributor.author Modreanu, Mircea
dc.contributor.author Hurley, Paul K.
dc.contributor.author Armstrong, B. M.
dc.contributor.author McNeill, D. W.
dc.date.accessioned 2017-07-25T14:16:24Z
dc.date.available 2017-07-25T14:16:24Z
dc.date.issued 2014
dc.identifier.citation Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102. doi: 10.1063/1.4858961 en
dc.identifier.volume 104
dc.identifier.issued 1
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4265
dc.identifier.doi 10.1063/1.4858961
dc.description.abstract Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (similar to 2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship National Science Foundation (US-Ireland R&D Partnership Program (USI 009)); Science Foundation Ireland (08/US/I1546) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4858961
dc.rights © 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4858961 en
dc.subject Schottky barriers en
dc.subject Oxidation en
dc.subject Ge(100) en
dc.subject Mosfets en
dc.subject Germanium en
dc.subject Elemental semiconductors en
dc.subject Aluminium en
dc.subject Fermi levels en
dc.subject Metal to metal contacts en
dc.subject Surfaces
dc.title Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Modreanu,Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: mircea.modreanu@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 243939564
dc.internal.wokid WOS:000329838800033
dc.contributor.funder Department for Employment and Learning, Northern Ireland
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder National Science Foundation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress mircea.modreanu@tyndall.ie en
dc.identifier.articleid 12102


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