Electrical performance of III-V gate-all-around nanowire transistors

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Electrical performance of III-V gate-all-around nanowire transistors

Razavi, Pedram; Fagas, Gíorgos
Date: 2013
Copyright: © 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Razavi, P. and Fagas, G. (2013) 'Electrical performance of III-V gate-all-around nanowire transistors', Applied Physics Letters, 103(6), pp. 063506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4817997
Related: http://aip.scitation.org/doi/abs/10.1063/1.4817997
Citation: Razavi, P. and Fagas, G. (2013) 'Electrical performance of III-V gate-all-around nanowire transistors', Applied Physics Letters, 103(6), pp. 063506. doi: 10.1063/1.4817997
Published Version: 10.1063/1.4817997

Abstract:

The performance of III-V inversion-mode and junctionless nanowire field-effect transistors are investigated using quantum simulations and are compared with those of silicon devices. We show that at ultrascaled dimensions silicon can offer better electrical performance in terms of short-channel effects and drive current than other materials. This is explained simply by suppression of source-drain tunneling due to the higher effective mass, shorter natural length, and the higher density of states in the confined channel. We also confirm that III-V junctionless nanowire transistors are more immune to short-channel effects than conventional inversion-mode III-V nanowire field-effect transistors. (C) 2013 AIP Publishing LLC.

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