Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

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dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Manganaro, Marina
dc.contributor.author Pelucchi, Emanuele
dc.date.accessioned 2017-07-28T10:48:29Z
dc.date.available 2017-07-28T10:48:29Z
dc.date.issued 2012
dc.identifier.citation Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112. doi: 10.1063/1.3703587 en
dc.identifier.volume 100
dc.identifier.issued 15
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4300
dc.identifier.doi 10.1063/1.3703587
dc.description.abstract A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the (111) B direction. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3703587) en
dc.description.sponsorship Science Foundation Ireland (05/IN.1/I25, 10/IN.1/I3000, 07/SRC/I117); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3703587
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3703587 en
dc.subject Temperature en
dc.subject Relaxation en
dc.subject Layers en
dc.subject Crystal defects en
dc.subject III-V semiconductors en
dc.subject Epitaxy en
dc.subject Surface morphology en
dc.subject Surface strains en
dc.title Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Agnieszka Gocalińska, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: agnieszka.gocalinska@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000303128000037
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Intel Corporation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress agnieszka.gocalinska@tyndall.ie en
dc.identifier.articleid 152112


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