Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

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dc.contributor.authorGocaliƄska, Agnieszka M.
dc.contributor.authorManganaro, Marina
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIntel Corporation
dc.date.accessioned2017-07-28T10:48:29Z
dc.date.available2017-07-28T10:48:29Z
dc.date.issued2012
dc.description.abstractA virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the (111) B direction. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3703587)en
dc.description.sponsorshipScience Foundation Ireland (05/IN.1/I25, 10/IN.1/I3000, 07/SRC/I117);en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid152112
dc.identifier.citationGocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112. doi: 10.1063/1.3703587en
dc.identifier.doi10.1063/1.3703587
dc.identifier.endpage5
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued15
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4300
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3703587
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3703587en
dc.subjectTemperatureen
dc.subjectRelaxationen
dc.subjectLayersen
dc.subjectCrystal defectsen
dc.subjectIII-V semiconductorsen
dc.subjectEpitaxyen
dc.subjectSurface morphologyen
dc.subjectSurface strainsen
dc.titleSuppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structureen
dc.typeArticle (peer-reviewed)en
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