Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

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2012
Authors
Gocalińska, Agnieszka M.
Manganaro, Marina
Pelucchi, Emanuele
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AIP Publishing
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Abstract
A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the (111) B direction. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3703587)
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Temperature , Relaxation , Layers , Crystal defects , III-V semiconductors , Epitaxy , Surface morphology , Surface strains
Citation
Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112. doi: 10.1063/1.3703587
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© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3703587