Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation
Gity, Farzan; Byun, Ki Yeol; Lee, Ko-Hsin; Cherkaoui, Karim; Hayes, John M.; Morrison, Alan P.; Colinge, Cindy; Corbett, Brian M.
Date:
2012
Copyright:
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688174
Citation:
Gity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102. doi: 10.1063/1.3688174
Abstract:
The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being > 8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688174)
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