Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

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dc.contributor.author Gity, Farzan
dc.contributor.author Byun, Ki Yeol
dc.contributor.author Lee, Ko-Hsin
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Hayes, John M.
dc.contributor.author Morrison, Alan P.
dc.contributor.author Colinge, Cindy
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-07-28T10:48:29Z
dc.date.available 2017-07-28T10:48:29Z
dc.date.issued 2012
dc.identifier.citation Gity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102. doi: 10.1063/1.3688174 en
dc.identifier.volume 100
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4302
dc.identifier.doi 10.1063/1.3688174
dc.description.abstract The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being > 8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688174) en
dc.description.sponsorship Science foundation Ireland (07/SRC/I1173, 07/IN/I937) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3688174
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688174 en
dc.subject Performance en
dc.subject Hydrogen en
dc.subject Photodetector en
dc.subject Sige en
dc.subject Germanium en
dc.subject Annealing en
dc.subject Elemental semiconductors en
dc.subject Tunneling en
dc.subject Leakage currents en
dc.title Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Karim Cherkaoui, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-4404, Email: karim.cherkaoui@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 421656767
dc.internal.wokid WOS:000301504800024
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress karim.cherkaoui@tyndall.ie en
dc.internal.IRISemailaddress a.morrison@ucc.ie
dc.identifier.articleid 92102


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