Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range
Pulka, Jaroslaw; Piwonski, Tomasz; Huyet, Guillaume; Houlihan, John; Semenova, E.; Lematre, A.; Merghem, Kamel; Martinez, Anthony; Ramdane, Abderrahim
Date:
2012
Copyright:
© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pulka, J., Piwonski, T., Huyet, G., Houlihan, J., Semenova, E., Lematre, A., Merghem, K., Martinez, A. and Ramdane, A. (2012) 'Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range', Applied Physics Letters, 100(7), pp. 071107 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3686901
Citation:
Pulka, J., Piwonski, T., Huyet, G., Houlihan, J., Semenova, E., Lematre, A., Merghem, K., Martinez, A. and Ramdane, A. (2012) 'Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range', Applied Physics Letters, 100(7), pp. 071107. doi: 10.1063/1.3686901
Abstract:
The ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, ground state wavelengths exhibit full gain recovery in less than 10 ps up to 3 times transparency, attributed to enhanced carrier refilling via the injector layer. The effect of the injector can also been seen in unusual phase dynamics at excited state wavelengths at this injection level. (C) 2012 American Institute of Physics. (doi:10.1063/1.3686901)
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