Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

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2011
Authors
O'Regan, Terrance P.
Hurley, Paul K.
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AIP Publishing
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Abstract
The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor capacitors (MOSCAPs) is calculated in three cases. First, quantization is not considered, then quantization of the C-valley is included, and finally quantization of the Gamma-, X-, and L-valleys is included. The choice of valley energy-minima is shown to determine the onset of occupation of the satellite valleys and corresponding increase in total capacitance. An equivalent-oxide-thickness correction is defined and used as a figure-of-merit to compare III-V to Si MOSCAPs and as a metric for the density-of-states bottleneck. (C) 2011 American Institute of Physics. (doi:10.1063/1.3652699)
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Transport , Silicon , Mosfets , III-V semiconductors , Capacitance , Metal insulator semiconductor structures , Interfacial properties , Dielectrics
Citation
O’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502. doi: 10.1063/1.3652699
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© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3652699