Random telegraph-signal noise in junctionless transistors

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dc.contributor.author Nazarov, Alexei N.
dc.contributor.author Ferain, Isabelle
dc.contributor.author Akhavan, Nima Dehdashti
dc.contributor.author Razavi, Pedram
dc.contributor.author Yu, Ran
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T11:04:41Z
dc.date.available 2017-07-28T11:04:41Z
dc.date.issued 2011
dc.identifier.citation Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111. doi: 10.1063/1.3557505 en
dc.identifier.volume 98
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4326
dc.identifier.doi 10.1063/1.3557505
dc.description.abstract Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of RTN is considerably smaller in JL devices than in inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique is developed to extract the main parameters of the traps, including the average charge capture and emission time from the traps. (C) 2011 American Institute of Physics. (doi:10.1063/1.3557505) en
dc.description.sponsorship Science Foundation Ireland (Contract No. 05/IN/I888); Higher Education Authority (Programme for Research in Third-Level Institutions); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3557505
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3557505 en
dc.subject MOSFETs en
dc.subject Silicon en
dc.subject Doping en
dc.subject Nanowires en
dc.subject Electric measurements en
dc.title Random telegraph-signal noise in junctionless transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Jean-Pierre Colinge, Tyndall National Institute, University College Cork, Cork, Ireland,+353-21-490-3000, Email: jean-pierre.colinge@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000288026700039
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme
dc.contributor.funder Higher Education Authority
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en
dc.identifier.articleid 92111
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+


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