Random telegraph-signal noise in junctionless transistors

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Date
2011
Authors
Nazarov, Alexei N.
Ferain, Isabelle
Akhavan, Nima Dehdashti
Razavi, Pedram
Yu, Ran
Colinge, Jean-Pierre
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Publisher
AIP Publishing
Published Version
10.1063/1.3557505
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Abstract
Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of RTN is considerably smaller in JL devices than in inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique is developed to extract the main parameters of the traps, including the average charge capture and emission time from the traps. (C) 2011 American Institute of Physics. (doi:10.1063/1.3557505)
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Keywords
MOSFETs , Silicon , Doping , Nanowires , Electric measurements
Citation
Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111. doi: 10.1063/1.3557505
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http://aip.scitation.org/doi/abs/10.1063/1.3557505
URI
https://hdl.handle.net/10468/4326
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Tyndall National Institute - Journal Articles
Copyright
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3557505