Low-temperature conductance oscillations in junctionless nanowire transistors
Loading...
Files
Published Version
Date
2010
Authors
Park, Jong-Tae
Kim, Jin Young
Lee, Chi-Woo
Colinge, Jean-Pierre
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Junctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multigate metal-oxide-semiconductor field-effect devices. Clear oscillations are observed at 77 K at a drain voltage of 100 mV in devices with a 10 x 10 nm(2) cross section. (C) 2010 American Institute of Physics. (doi:10.1063/1.3506899)
Description
Keywords
Nanowires , MOSFETs , Doping , Metal insulator semiconductor structures , Temperature measurement
Citation
Park, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101. doi: 10.1063/1.3506899
Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3506899