Mobility improvement in nanowire junctionless transistors by uniaxial strain
Raskin, Jean-Pierre; Colinge, Jean-Pierre; Ferain, Isabelle; Kranti, Abhinav; Lee, Chi-Woo; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran
Date:
2010
Copyright:
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Raskin, J.-P., Colinge, J.-P., Ferain, I., Kranti, A., Lee, C.-W., Akhavan, N. D., Yan, R., Razavi, P. and Yu, R. (2010) 'Mobility improvement in nanowire junctionless transistors by uniaxial strain', Applied Physics Letters, 97(4), pp. 042114 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3474608
Citation:
Raskin, J.-P., Colinge, J.-P., Ferain, I., Kranti, A., Lee, C.-W., Akhavan, N. D., Yan, R., Razavi, P. and Yu, R. (2010) 'Mobility improvement in nanowire junctionless transistors by uniaxial strain', Applied Physics Letters, 97(4), pp. 042114. doi: 10.1063/1.3474608
Abstract:
Improvement of current drive in n- and p-type silicon junctionless metal-oxide-semiconductor-field-effect-transistors (MOSFETs) using strain is demonstrated. Junctionless transistors have heavily doped channels with doping concentrations in excess of 10(19) cm(-3) and feature bulk conduction, as opposed to surface channel conduction. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm thick silicon nanowires as narrow as 20 nm. These experimental results demonstrate the possibility of enhancing mobility in heavily doped silicon junctionless MOSFETs using strain technology. (C) 2010 American Institute of Physics. (doi:10.1063/1.3474608)
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