Low temperature germanium to silicon direct wafer bonding using free radical exposure
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Published Version
Date
2010
Authors
Byun, Ki Yeol
Ferain, Isabelle
Fleming, Peter G.
Morris, Michael A.
Goorsky, M. S.
Colinge, Cindy
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201)
Description
Keywords
Activation , Substrate , Germanium , Elemental semiconductors , Annealing , Interface structure , Buried interfaces
Citation
Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110. doi: 10.1063/1.3360201
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Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3360201