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| dc.contributor.author | Byun, Ki Yeol | |
| dc.contributor.author | Ferain, Isabelle | |
| dc.contributor.author | Fleming, Peter G. | |
| dc.contributor.author | Morris, Michael A. | |
| dc.contributor.author | Goorsky, M. S. | |
| dc.contributor.author | Colinge, Cindy | |
| dc.date.accessioned | 2017-07-28T11:22:09Z | |
| dc.date.available | 2017-07-28T11:22:09Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110. doi: 10.1063/1.3360201 | en |
| dc.identifier.volume | 96 | |
| dc.identifier.issued | 10 | |
| dc.identifier.startpage | 1 | |
| dc.identifier.endpage | 3 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/10468/4344 | |
| dc.identifier.doi | 10.1063/1.3360201 | |
| dc.description.abstract | A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201) | en |
| dc.description.sponsorship | Science Foundation Ireland (Grant Nos. 07/IN/I937 and 08/W.1/I2597) | en |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing | en |
| dc.relation.uri | http://aip.scitation.org/doi/abs/10.1063/1.3360201 | |
| dc.rights | © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3360201 | en |
| dc.subject | Activation | en |
| dc.subject | Substrate | en |
| dc.subject | Germanium | en |
| dc.subject | Elemental semiconductors | en |
| dc.subject | Annealing | en |
| dc.subject | Interface structure | en |
| dc.subject | Buried interfaces | en |
| dc.title | Low temperature germanium to silicon direct wafer bonding using free radical exposure | en |
| dc.type | Article (peer-reviewed) | en |
| dc.internal.authorcontactother | Michael A. Morris, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: m.morris@ucc.ie | en |
| dc.internal.availability | Full text available | en |
| dc.description.version | Published Version | en |
| dc.internal.wokid | WOS:000275588000042 | |
| dc.contributor.funder | Science Foundation Ireland
|
|
| dc.description.status | Peer reviewed | en |
| dc.identifier.journaltitle | Applied Physics Letters | en |
| dc.internal.IRISemailaddress | m.morris@ucc.ie | en |
| dc.identifier.articleid | 102110 |
