Low temperature germanium to silicon direct wafer bonding using free radical exposure

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dc.contributor.author Byun, Ki Yeol
dc.contributor.author Ferain, Isabelle
dc.contributor.author Fleming, Peter G.
dc.contributor.author Morris, Michael A.
dc.contributor.author Goorsky, M. S.
dc.contributor.author Colinge, Cindy
dc.date.accessioned 2017-07-28T11:22:09Z
dc.date.available 2017-07-28T11:22:09Z
dc.date.issued 2010
dc.identifier.citation Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110. doi: 10.1063/1.3360201 en
dc.identifier.volume 96
dc.identifier.issued 10
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4344
dc.identifier.doi 10.1063/1.3360201
dc.description.abstract A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201) en
dc.description.sponsorship Science Foundation Ireland (Grant Nos. 07/IN/I937 and 08/W.1/I2597) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3360201
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3360201 en
dc.subject Activation en
dc.subject Substrate en
dc.subject Germanium en
dc.subject Elemental semiconductors en
dc.subject Annealing en
dc.subject Interface structure en
dc.subject Buried interfaces en
dc.title Low temperature germanium to silicon direct wafer bonding using free radical exposure en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Michael A. Morris, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: m.morris@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000275588000042
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress m.morris@ucc.ie en
dc.identifier.articleid 102110


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