Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2

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dc.contributor.author Afanas'ev, V. V.
dc.contributor.author Stesmans, A.
dc.contributor.author Brammertz, G.
dc.contributor.author Delabie, A.
dc.contributor.author Sionke, S.
dc.contributor.author O'Mahony, Aileen
dc.contributor.author Povey, Ian M.
dc.contributor.author Pemble, Martyn E.
dc.contributor.author O'Connor, Éamon
dc.contributor.author Hurley, Paul K.
dc.contributor.author Newcomb, Simon B.
dc.date.accessioned 2017-07-28T11:47:32Z
dc.date.available 2017-07-28T11:47:32Z
dc.date.issued 2009
dc.identifier.citation Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2009) 'Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2', Applied Physics Letters, 94(20), pp. 202110. doi: 10.1063/1.3137187 en
dc.identifier.volume 94
dc.identifier.issued 20
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4360
dc.identifier.doi 10.1063/1.3137187
dc.description.abstract The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3137187) en
dc.description.sponsorship Fonds Wetenschappelijk Onderzoek (FWO Vlaanderen (Grant No. 1.5.057.07)); Science Foundation Ireland (Grant No. 07/SRC/I1172) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3137187
dc.rights © 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2009) 'Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2', Applied Physics Letters, 94(20), pp. 202110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3137187 en
dc.subject Band offsets en
dc.subject Semiconductors en
dc.subject Alumina en
dc.subject Atomic layer deposition en
dc.subject Conduction bands en
dc.subject Energy gap en
dc.subject Gallium arsenide en
dc.subject Hafnium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Nanostructured materials en
dc.subject Oxidation en
dc.subject Photoconductivity en
dc.subject Photoemission en
dc.subject Semiconductor-insulator boundaries en
dc.subject Valence bands en
dc.subject Ozone en
dc.subject Semiconductors en
dc.subject Insulators en
dc.title Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2 en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000266342800035
dc.contributor.funder Fonds Wetenschappelijk Onderzoek
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 202110


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