Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
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Date
2009
Authors
Afanas'ev, V. V.
Stesmans, A.
Brammertz, G.
Delabie, A.
Sionke, S.
O'Mahony, Aileen
Povey, Ian M.
Pemble, Martyn E.
O'Connor, Éamon
Hurley, Paul K.
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Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3137187)
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Keywords
Band offsets , Semiconductors , Alumina , Atomic layer deposition , Conduction bands , Energy gap , Gallium arsenide , Hafnium compounds , III-V semiconductors , Indium compounds , Nanostructured materials , Oxidation , Photoconductivity , Photoemission , Semiconductor-insulator boundaries , Valence bands , Ozone , Semiconductors , Insulators
Citation
Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2009) 'Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2', Applied Physics Letters, 94(20), pp. 202110. doi: 10.1063/1.3137187
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2009) 'Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2', Applied Physics Letters, 94(20), pp. 202110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3137187