Junctionless multigate field-effect transistor

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Date
2009
Authors
Lee, Chi-Woo
Afzalian, Aryan
Akhavan, Nima Dehdashti
Yan, Ran
Ferain, Isabelle
Colinge, Jean-Pierre
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AIP Publishing
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Abstract
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3079411)
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Keywords
Accumulation-mode , Soi mosfets , Performance , Gate , Field effect transistors , MOSFET , P-n junctions , Semiconductor doping , Doping , Metal insulator semiconductor structures , Semiconductor junctions , Transistors , Electrical properties
Citation
Lee, C.-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I. and Colinge, J.-P. (2009) 'Junctionless multigate field-effect transistor', Applied Physics Letters, 94(5), pp. 053511. doi: 10.1063/1.3079411
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© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lee, C.-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I. and Colinge, J.-P. (2009) 'Junctionless multigate field-effect transistor', Applied Physics Letters, 94(5), pp. 053511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3079411