Citation:Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506. doi: 10.1063/1.2336212
The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 mu m thick wafer was found to be less than 2 mm using the current grinding process. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2336212)
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