Characterizing stress in ultrathin silicon wafers

Files in this item

Icon
Name: 3363.pdf
Size: 363.2Kb
Format: PDF
Description: Published Version
View/Open

Characterizing stress in ultrathin silicon wafers

Paul, Indrajit; Majeed, Bivragh; Razeeb, Kafil M.; Barton, John
Date: 2006
Copyright: © 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2336212
Related: http://aip.scitation.org/doi/abs/10.1063/1.2336212
Citation: Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506. doi: 10.1063/1.2336212
Published Version: 10.1063/1.2336212

Abstract:

The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 mu m thick wafer was found to be less than 2 mm using the current grinding process. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2336212)

Show full item record

This item appears in the following Collection(s)

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement