Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation
Byun, Ki Yeol; Fleming, Peter; Bennett, Nick; Gity, Farzan; McNally, Patrick; Morris, Michael; Ferain, Isabelle; Colinge, Cindy
Date:
2011
Copyright:
© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355 and may be found at http://aip.scitation.org/doi/10.1063/1.3601355
Citation:
Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355
Abstract:
In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]
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