Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation
No Thumbnail Available
Files
Published Version
Date
2011
Authors
Byun, Ki Yeol
Fleming, Peter G.
Bennett, Nick
Gity, Farzan
McNally, Patrick
Morris, Michael A.
Ferain, Isabelle
Colinge, Cindy
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]
Description
Keywords
Germanium , Elemental semiconductors , Interface structure , Surface oxidation , Annealing
Citation
Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355
Copyright
© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355 and may be found at http://aip.scitation.org/doi/10.1063/1.3601355