Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices
O'Callaghan, James; Loi, Ruggero; Mura, Enrica E.; Roycroft, Brendan; Trindade, António José; Thomas, Kevin K.; Gocalińska, Agnieszka M.; Pelucchi, Emanuele; Zhang, J.; Roelkens, G.; Bower, Christopher A.; Corbett, Brian M.
Date:
2017-12-01
Copyright:
© 2017, Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Citation:
O'Callaghan, J., Loi, R., Mura, E. E., Roycroft, B., Trindade, A. J., Thomas, K., Gocalinska, A., Pelucchi, E., Zhang, J.; Roelkens, G.; Bower, C. A. and Corbett, B. (2017) 'Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices', Optical Materials Express, 7(12), pp.4408-4414. doi:10.1364/OME.7.004408
Abstract:
Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.
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