Inducing imperfections in germanium nanowires

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dc.contributor.author Biswas, Subhajit
dc.contributor.author Barth, Sven
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2018-01-17T12:20:04Z
dc.date.available 2018-01-17T12:20:04Z
dc.date.issued 2017-03-02
dc.identifier.citation Biswas, S., Barth, S. and Holmes, J. D. (2017) 'Inducing imperfections in germanium nanowires', Nano Research, 10(5), pp. 1510-1523. doi:10.1007/s12274-017-1430-9 en
dc.identifier.volume 10 en
dc.identifier.issued 5 en
dc.identifier.startpage 1510 en
dc.identifier.endpage 1523 en
dc.identifier.issn 1998-0124
dc.identifier.issn 1998-0000
dc.identifier.uri http://hdl.handle.net/10468/5288
dc.identifier.doi 10.1007/s12274-017-1430-9
dc.description.abstract Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical, electrical, and thermophysical applications. Additionally, the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties. In this highlight article, we review our recent progress and understanding in the deliberate induction of imperfections, in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities. The role of catalysts and catalyst–nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored. Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation. “Epitaxial defect transfer” process and catalyst–nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis. By inducing and manipulating twin boundaries in the metal catalysts, twin formation and density are controlled in Ge nanowires. The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries. Additionally, metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires. Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth, where the impurity Sn atoms become trapped with the deposition of successive layers, thus giving an extraordinary Sn content (>6 at.%) in Ge nanowires. A larger amount of Sn impingement (>9 at.%) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Tsinghua University Press and Springer-Verlag en
dc.relation.uri http://link.springer.com/article/10.1007/s12274-017-1430-9
dc.rights © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017. This is a pre-print of an article published in Nano Research. The final authenticated version is available online at: https://doi.org/10.1007/s12274-017-1430-9 en
dc.subject Germanium en
dc.subject Nanowire en
dc.subject Vapor-liquid-solid (VLS) en
dc.subject Growth en
dc.subject Twinning en
dc.subject Impurity incorporation en
dc.subject III-V nanowires en
dc.subject Silicon nanowires en
dc.subject Defect formation en
dc.subject GE nanowires en
dc.subject Twinning superlattices en
dc.subject Nanoelectromechanical devices en
dc.subject Stacking-faults en
dc.subject Growth en
dc.subject Semiconductors en
dc.subject Performance en
dc.title Inducing imperfections in germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-01-16T17:27:22Z
dc.description.version Submitted Version en
dc.internal.rssid 396015533
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nano Research en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en
dc.relation.project Science Foundation Ireland (SFI International Strategic Co-operation Award (ISCA) India Ireland program) en


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