Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

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dc.contributor.author Saladukha, Dzianis
dc.contributor.author Clavel, M. B.
dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Greene-Diniz, Gabriel
dc.contributor.author Grüning, M.
dc.contributor.author Hudait, Mantu
dc.contributor.author Ochalski, Tomasz J.
dc.date.accessioned 2018-05-31T13:58:17Z
dc.date.available 2018-05-31T13:58:17Z
dc.date.issued 2018-05-09
dc.identifier.citation Saladukha, D., Clavel, M. B., Murphy-Armando, F., Greene-Diniz, G., Grüning, M., Hudait, M. K. and Ochalski, T. J. (2018) 'Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies', Physical Review B, 97(19), 195304 (12 pp). doi: 10.1103/PhysRevB.97.195304 en
dc.identifier.volume 97 en
dc.identifier.issued 19 en
dc.identifier.startpage 195304-1 en
dc.identifier.endpage 195304-12 en
dc.identifier.issn 2469-9950
dc.identifier.uri http://hdl.handle.net/10468/6238
dc.identifier.doi 10.1103/PhysRevB.97.195304
dc.description.abstract Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band separation. In this work we bend the bands of Ge by means of biaxial tensile strain in order to achieve a direct band gap. Strain is applied by growth of Ge on a lattice mismatched InGaAs buffer layer with variable In content. Band structure is studied by photoluminescence and photoreflectance, giving the indirect and direct bands of the material. Obtained experimental energy band values are compared with a k p simulation. Photoreflectance spectra are also simulated and compared with the experiment. The obtained results indicate direct band structure obtained for a Ge sample with 1.94 % strain applied, with preferable Γ valley to heavy hole transition. en
dc.description.sponsorship Invest NI Grant, United States (Grant No. USI-073) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.relation.uri https://link.aps.org/doi/10.1103/PhysRevB.97.195304
dc.rights © 2018 American Physical Society en
dc.subject Germanium en
dc.subject Semiconductor en
dc.subject Photonics en
dc.subject InGaAs en
dc.subject Photoreflectance en
dc.subject Photoluminescence en
dc.title Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: f.murphyarmando@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-31T13:44:49Z
dc.description.version Published Version en
dc.internal.rssid 439766053
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Department for Employment and Learning, Northern Ireland en
dc.contributor.funder Queen's University Belfast en
dc.contributor.funder National Science Foundation en
dc.contributor.funder Invest NI, United States en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review B en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress f.murphyarmando@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/14/US/I3057/IE/Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors/ en
dc.relation.project info:eu-repo/grantAgreement/NSF/Directorate for Engineering::Division of Electrical, Communications & Cyber Systems/1348653/US/EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors/ en
dc.relation.project info:eu-repo/grantAgreement/NSF//1507950/US/US-Ireland R&D Partnership: Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors/ en


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