Citation:Bilousov, O. V., Carvajal, J. J., Drouin, D., Mateos, X., Díaz, F., Aguiló, M. and O’Dwyer, C. (2012) 'Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport', ACS Applied Materials & Interfaces, 4(12), pp. 6927-6934. doi: 10.1021/am3020668
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN–metal interface, allowing vapor–solid–solid seeding and subsequent growth of porous GaN. Current–voltage and capacitance–voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.
Lynch, Robert P.; Quill, Nathan; O'Dwyer, Colm; Dornhege, Monika; Rotermund, Harm H.; Buckley, D. Noel(Electrochemical Society, 2013-04)
Anodisation of n-InP in KOH results in the formation of porous layers with a finite thickness. We propose the reason for the cessation of porous etching is the formation of insoluble precipitates within the pores. Electron ...
Lynch, Robert P.; Quill, Nathan; O'Dwyer, Colm; Buckley, D. Noel(Electrochemical Society, 2013-07)
We have performed a computer simulation of the current during anodization of InP in aqueous KOH electrolyte based on the spatial characteristics of the porous structures that are formed. Specifically, we have developed a ...
Lynch, Robert P.; O'Dwyer, Colm; Sutton, David; Newcomb, Simon B.; Buckley, D. Noel(Electrochemical Society, 2007-05)
A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a ...
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