Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport
dc.contributor.author | Bilousov, Oleksandr V. | |
dc.contributor.author | Carvajal, Joan J. | |
dc.contributor.author | Drouin, Dominique | |
dc.contributor.author | Mateos, Xavier | |
dc.contributor.author | Diaz, Francesc | |
dc.contributor.author | Aguilo, Magdalena | |
dc.contributor.author | O'Dwyer, Colm | |
dc.contributor.funder | Seventh Framework Programme | en |
dc.contributor.funder | Ministerio de Economía, Industria y Competitividad, Gobierno de España | en |
dc.contributor.funder | Generalitat de Catalunya | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | Higher Education Authority | en |
dc.date.accessioned | 2018-06-11T15:52:14Z | |
dc.date.available | 2018-06-11T15:52:14Z | |
dc.date.issued | 2012-11-20 | |
dc.date.updated | 2018-06-11T09:11:16Z | |
dc.description.abstract | Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN–metal interface, allowing vapor–solid–solid seeding and subsequent growth of porous GaN. Current–voltage and capacitance–voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. | en |
dc.description.sponsorship | Ministerio de Economía, Industria y Competitividad, Gobierno de España (Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235); Higher Education Authority ( INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Bilousov, O. V., Carvajal, J. J., Drouin, D., Mateos, X., Díaz, F., Aguiló, M. and O’Dwyer, C. (2012) 'Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport', ACS Applied Materials & Interfaces, 4(12), pp. 6927-6934. doi: 10.1021/am3020668 | en |
dc.identifier.doi | 10.1021/am3020668 | |
dc.identifier.endpage | 6934 | en |
dc.identifier.issn | 1944-8244 | |
dc.identifier.journaltitle | ACS Applied Materials & Interfaces | en |
dc.identifier.startpage | 6927 | en |
dc.identifier.uri | https://hdl.handle.net/10468/6276 | |
dc.identifier.volume | 4 | en |
dc.language.iso | en | en |
dc.publisher | American Chemical Society (ACS) | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/ | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/ | en |
dc.relation.project | info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE | en |
dc.relation.uri | https://pubs.acs.org/doi/abs/10.1021/am3020668 | |
dc.rights | © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/am3020668 | en |
dc.subject | Ohmic electron transport | en |
dc.subject | Porous GaN | en |
dc.subject | Chemical vapor deposition | en |
dc.subject | Electron transport properties | en |
dc.subject | Gallium alloys | en |
dc.subject | Phase interfaces | en |
dc.subject | Platinum | en |
dc.subject | Vapors | en |
dc.subject | Gallium nitride | en |
dc.subject | Broadband absorption | en |
dc.subject | Capacitance voltage measurements | en |
dc.subject | Contact resistivities | en |
dc.subject | Current voltage | en |
dc.subject | Direct reactions | en |
dc.subject | Electron transport | en |
dc.subject | GaN crystals | en |
dc.subject | GaN layers | en |
dc.subject | High quality | en |
dc.subject | Low resistivity | en |
dc.subject | Porous crystals | en |
dc.subject | Porous GaN | en |
dc.subject | Porous layers | en |
dc.subject | Seed layer | en |
dc.subject | Silicon substrates | en |
dc.subject | Simultaneous formation | en |
dc.subject | Workfunction metals | en |
dc.title | Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport | en |
dc.type | Article (preprint) | en |