Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorDrouin, Dominique
dc.contributor.authorMateos, Xavier
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-06-11T15:52:14Z
dc.date.available2018-06-11T15:52:14Z
dc.date.issued2012-11-20
dc.date.updated2018-06-11T09:11:16Z
dc.description.abstractPorous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN–metal interface, allowing vapor–solid–solid seeding and subsequent growth of porous GaN. Current–voltage and capacitance–voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235); Higher Education Authority ( INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Drouin, D., Mateos, X., Díaz, F., Aguiló, M. and O’Dwyer, C. (2012) 'Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport', ACS Applied Materials & Interfaces, 4(12), pp. 6927-6934. doi: 10.1021/am3020668en
dc.identifier.doi10.1021/am3020668
dc.identifier.endpage6934en
dc.identifier.issn1944-8244
dc.identifier.journaltitleACS Applied Materials & Interfacesen
dc.identifier.startpage6927en
dc.identifier.urihttps://hdl.handle.net/10468/6276
dc.identifier.volume4en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/am3020668
dc.rights© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/am3020668en
dc.subjectOhmic electron transporten
dc.subjectPorous GaNen
dc.subjectChemical vapor depositionen
dc.subjectElectron transport propertiesen
dc.subjectGallium alloysen
dc.subjectPhase interfacesen
dc.subjectPlatinumen
dc.subjectVaporsen
dc.subjectGallium nitrideen
dc.subjectBroadband absorptionen
dc.subjectCapacitance voltage measurementsen
dc.subjectContact resistivitiesen
dc.subjectCurrent voltageen
dc.subjectDirect reactionsen
dc.subjectElectron transporten
dc.subjectGaN crystalsen
dc.subjectGaN layersen
dc.subjectHigh qualityen
dc.subjectLow resistivityen
dc.subjectPorous crystalsen
dc.subjectPorous GaNen
dc.subjectPorous layersen
dc.subjectSeed layeren
dc.subjectSilicon substratesen
dc.subjectSimultaneous formationen
dc.subjectWorkfunction metalsen
dc.titleReduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transporten
dc.typeArticle (preprint)en
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