Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport
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Accepted version
Date
2012-11-20
Authors
Bilousov, Oleksandr V.
Carvajal, Joan J.
Drouin, Dominique
Mateos, Xavier
Diaz, Francesc
Aguilo, Magdalena
O'Dwyer, Colm
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society (ACS)
Published Version
Abstract
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN–metal interface, allowing vapor–solid–solid seeding and subsequent growth of porous GaN. Current–voltage and capacitance–voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.
Description
Keywords
Ohmic electron transport , Porous GaN , Chemical vapor deposition , Electron transport properties , Gallium alloys , Phase interfaces , Platinum , Vapors , Gallium nitride , Broadband absorption , Capacitance voltage measurements , Contact resistivities , Current voltage , Direct reactions , Electron transport , GaN crystals , GaN layers , High quality , Low resistivity , Porous crystals , Porous GaN , Porous layers , Seed layer , Silicon substrates , Simultaneous formation , Workfunction metals
Citation
Bilousov, O. V., Carvajal, J. J., Drouin, D., Mateos, X., Díaz, F., Aguiló, M. and O’Dwyer, C. (2012) 'Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport', ACS Applied Materials & Interfaces, 4(12), pp. 6927-6934. doi: 10.1021/am3020668
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Copyright
© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/am3020668