Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport

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dc.contributor.author Bilousov, Oleksandr V.
dc.contributor.author Carvajal, Joan J.
dc.contributor.author Drouin, Dominique
dc.contributor.author Mateos, Xavier
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2018-06-11T15:52:14Z
dc.date.available 2018-06-11T15:52:14Z
dc.date.issued 2012-11-20
dc.identifier.citation Bilousov, O. V., Carvajal, J. J., Drouin, D., Mateos, X., Díaz, F., Aguiló, M. and O’Dwyer, C. (2012) 'Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport', ACS Applied Materials & Interfaces, 4(12), pp. 6927-6934. doi: 10.1021/am3020668 en
dc.identifier.volume 4 en
dc.identifier.startpage 6927 en
dc.identifier.endpage 6934 en
dc.identifier.issn 1944-8244
dc.identifier.uri http://hdl.handle.net/10468/6276
dc.identifier.doi 10.1021/am3020668
dc.description.abstract Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN–metal interface, allowing vapor–solid–solid seeding and subsequent growth of porous GaN. Current–voltage and capacitance–voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. en
dc.description.sponsorship Ministerio de Economía, Industria y Competitividad, Gobierno de España (Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235); Higher Education Authority ( INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri https://pubs.acs.org/doi/abs/10.1021/am3020668
dc.rights © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/am3020668 en
dc.subject Ohmic electron transport en
dc.subject Porous GaN en
dc.subject Chemical vapor deposition en
dc.subject Electron transport properties en
dc.subject Gallium alloys en
dc.subject Phase interfaces en
dc.subject Platinum en
dc.subject Vapors en
dc.subject Gallium nitride en
dc.subject Broadband absorption en
dc.subject Capacitance voltage measurements en
dc.subject Contact resistivities en
dc.subject Current voltage en
dc.subject Direct reactions en
dc.subject Electron transport en
dc.subject GaN crystals en
dc.subject GaN layers en
dc.subject High quality en
dc.subject Low resistivity en
dc.subject Porous crystals en
dc.subject Porous GaN en
dc.subject Porous layers en
dc.subject Seed layer en
dc.subject Silicon substrates en
dc.subject Simultaneous formation en
dc.subject Workfunction metals en
dc.title Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport en
dc.type Article (preprint) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-06-11T09:11:16Z
dc.description.version Accepted Version en
dc.internal.rssid 190495377
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Ministerio de Economía, Industria y Competitividad, Gobierno de España en
dc.contributor.funder Generalitat de Catalunya en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Applied Materials & Interfaces en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/ en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE en


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