The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
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Date
2017
Authors
Gammon, P. M.
Li, F.
Chan, C. W.
Sanchez, A.
Hindmarsh, S.
Gity, Farzan
Trajkovic, T.
Kilchytska, V.
Pathirana, V.
Camuso, G.
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications Ltd
Published Version
Abstract
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.
Description
Keywords
Harsh environment , Lateral MOSFET , Silicon , Silicon carbide , SiC , Wafer bonding
Citation
P. M. Gammon et al. (2017) ‘The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices’, Materials Science Forum, 897, pp. 747-750. doi: 10.4028/www.scientific.net/MSF.897.747
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© 2017, Trans Tech Publications Inc. All rights reserved.