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Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors
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Date
2018-08-17
Authors
Dragoman, Mircea
Modreanu, Mircea
Povey, Ian M.
Dinescu, Adrian
Dragoman, Daniela
Di Donato, Andreea
Pavoni, Eleonora
Farina, Marco
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
We have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the capacitors containing graphene are 3-4 times larger than the ferroelectric capacitors without graphene, and increase even more after annealing. This physical effect can be attributed to the additional electric field exerted by the graphene monolayer on the HfZrO ferroelectric semiconductor capacitor, and to the negative thermal extension coefficient of graphene, respectively.
Description
Keywords
MoS2 transistors , Thin-films , Si
Citation
Dragoman, M., Modreanu, M., Povey, I. M., Dinescu, A., Dragoman, D., Di Donato, A., Pavoni, E. and Farina, M. (2018) 'Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors', Nanotechnology, 29(42), 425204 (6pp). doi:10.1088/1361-6528/aad75e
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Copyright
© 2018, IOP Publishing. All rights reserved. Reproduced by permission of the publisher. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/1361-6528/aad75e