"In situ" hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays

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dc.contributor.author Ghoshal, Tandra
dc.contributor.author Senthamaraikannan, Ramsankar
dc.contributor.author Shaw, Matthew T.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.date.accessioned 2018-09-14T08:52:12Z
dc.date.available 2018-09-14T08:52:12Z
dc.date.issued 2012-12
dc.identifier.citation Ghoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2012) '“In situ” hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays', Nanoscale, 4(24), pp. 7743-7750. doi: 10.1039/C2NR32693K en
dc.identifier.volume 4 en
dc.identifier.startpage 7743 en
dc.identifier.endpage 7750 en
dc.identifier.issn 2040-3364
dc.identifier.uri http://hdl.handle.net/10468/6783
dc.identifier.doi 10.1039/C2NR32693K
dc.description.abstract A novel, simple and in situ hard mask technology that can be used to develop high aspect ratio silicon nanopillar and nanowire features on a substrate surface is demonstrated. The technique combines a block copolymer inclusion method that generates nanodot arrays on substrate and an inductively coupled plasma (ICP) etch processing step to fabricate Si nanopillar and nanowire arrays. Iron oxide was found to be an excellent resistant mask over silicon under the selected etching conditions. Features of a very high aspect ratio can be created by this method. The nanopillars have uniform diameter and smooth sidewalls throughout their entire length. The diameter (15–27 nm) and length of the nanopillars can be tuned easily. Different spectroscopic and microscopic techniques were used to examine the morphology and size, surface composition and crystallinity of the resultant patterns. The methodology developed may have important technological applications and provide an inexpensive manufacturing route to nanodimensioned topographical patterns. The high aspect ratio of the features may have importance in the area of photonics and the photoluminescence properties are found to be similar to those of surface-oxidized silicon nanocrystals and porous silicon. en
dc.description.sponsorship Science Foundation Ireland (Strategic Research Cluster FORME grant, 09/SIRG/I1621 grant and the CSET CRANN grant) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.relation.uri http://pubs.rsc.org/en/Content/ArticleLanding/2012/NR/c2nr32693k
dc.rights © Royal Society of Chemistry 2012 en
dc.subject Nanowires en
dc.subject Aspect ratio en
dc.subject Block copolymers en
dc.subject Etching en
dc.subject Inductively coupled plasma en
dc.subject Iron oxides en
dc.subject Porous silicon en
dc.subject Silicon en
dc.subject Silicon oxides en
dc.title "In situ" hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-07T12:58:25Z
dc.description.version Accepted Version en
dc.internal.rssid 186323202
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoscale en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/ en

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