dc.contributor.author |
Ghoshal, Tandra |
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dc.contributor.author |
Senthamaraikannan, Ramsankar |
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dc.contributor.author |
Shaw, Matthew T. |
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dc.contributor.author |
Holmes, Justin D. |
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dc.contributor.author |
Morris, Michael A. |
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dc.date.accessioned |
2018-09-14T08:52:12Z |
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dc.date.available |
2018-09-14T08:52:12Z |
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dc.date.issued |
2012-12 |
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dc.identifier.citation |
Ghoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2012) '“In situ” hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays', Nanoscale, 4(24), pp. 7743-7750. doi: 10.1039/C2NR32693K |
en |
dc.identifier.volume |
4 |
en |
dc.identifier.startpage |
7743 |
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dc.identifier.endpage |
7750 |
en |
dc.identifier.issn |
2040-3364 |
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dc.identifier.uri |
http://hdl.handle.net/10468/6783 |
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dc.identifier.doi |
10.1039/C2NR32693K |
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dc.description.abstract |
A novel, simple and in situ hard mask technology that can be used to develop high aspect ratio silicon nanopillar and nanowire features on a substrate surface is demonstrated. The technique combines a block copolymer inclusion method that generates nanodot arrays on substrate and an inductively coupled plasma (ICP) etch processing step to fabricate Si nanopillar and nanowire arrays. Iron oxide was found to be an excellent resistant mask over silicon under the selected etching conditions. Features of a very high aspect ratio can be created by this method. The nanopillars have uniform diameter and smooth sidewalls throughout their entire length. The diameter (15–27 nm) and length of the nanopillars can be tuned easily. Different spectroscopic and microscopic techniques were used to examine the morphology and size, surface composition and crystallinity of the resultant patterns. The methodology developed may have important technological applications and provide an inexpensive manufacturing route to nanodimensioned topographical patterns. The high aspect ratio of the features may have importance in the area of photonics and the photoluminescence properties are found to be similar to those of surface-oxidized silicon nanocrystals and porous silicon. |
en |
dc.description.sponsorship |
Science Foundation Ireland (Strategic Research Cluster FORME grant, 09/SIRG/I1621 grant and the CSET CRANN grant) |
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dc.format.mimetype |
application/pdf |
en |
dc.language.iso |
en |
en |
dc.relation.uri |
http://pubs.rsc.org/en/Content/ArticleLanding/2012/NR/c2nr32693k |
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dc.rights |
© Royal Society of Chemistry 2012 |
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dc.subject |
Nanowires |
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dc.subject |
Aspect ratio |
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dc.subject |
Block copolymers |
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dc.subject |
Etching |
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dc.subject |
Inductively coupled plasma |
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dc.subject |
Iron oxides |
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dc.subject |
Porous silicon |
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dc.subject |
Silicon |
en |
dc.subject |
Silicon oxides |
en |
dc.title |
"In situ" hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie |
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dc.internal.availability |
Full text available |
en |
dc.date.updated |
2018-08-07T12:58:25Z |
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dc.description.version |
Accepted Version |
en |
dc.internal.rssid |
186323202 |
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dc.contributor.funder |
Science Foundation Ireland
|
en |
dc.description.status |
Peer reviewed |
en |
dc.identifier.journaltitle |
Nanoscale |
en |
dc.internal.copyrightchecked |
No !!CORA!! |
en |
dc.internal.licenseacceptance |
Yes |
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dc.internal.IRISemailaddress |
j.holmes@ucc.ie |
en |
dc.relation.project |
info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/
|
en |