Thermally stable external cavity laser based on silicon nitride periodic nanostructures
Iadanza, Simone; Bakoz, Andrei P.; Panettieri, D.; Tedesco, A.; Giannino, G.; Grande, M.; O'Faolain, Liam
Date:
2018-09-27
Copyright:
© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Iadanza, S., Bakoz, A., Panettieri, D., Tedesco, A., Giannino, G., Grande, M. and O’Faolain, L. (2018) ‘Thermally stable external cavity aser Bbased on silicon nitride periodic nanostructures’, 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, Romania. 1-5 July, Tu.C5.4 (4pp). doi:10.1109/ICTON.2018.8473622
Abstract:
In this paper we demonstrate a thermally stable silicon nitride external cavity (SiN EC) laser based on a 250 μm sized Reflective Semiconductor Optical Amplifier (RSOA) butt-coupled to a series of Si 3 N 4 Bragg gratings acting as wavelength selective reflectors. The laser shows power outputs over 3 mW, a very low lasing threshold of 12 mA and with a typical Side-Mode Suppression Ratio of 45 dB. In this configuration a mode-hop free lasing regime over a range of 47 mA has been achieved (from 15 mA to 62 mA). Thermal stability of the lasing wavelength at temperatures up to 80°C is demonstrated. Further on, experimental results on a passive chip based on new 1D photonic crystal cavities are shown to have higher Q-Factors. This paves the way to avoiding thermal wavelength drifts and unlocks the possibility for these devices to be integrated in Dense WDM and optical-interconnect technologies, where transceivers must operate over a wide temperature range without active cooling.
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