Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves
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Burke, K. F.
Hurley, Paul K.
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out.
TCAD , Depletion capacitance , Quantization model
Caruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D.; Gity, F., Monaghan, S., Palestri, P.; Hurley, P. K.; Selmi, L. (2018) ‘Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves’, 20th Workshop on Dielectrics in Microelectronics - WODIM 2018, Berlin, Germany, 10-14 June.
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